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Application of Silicon-Carbide (SiC) Power Semiconductor Devices for the High Frequency High Voltage Power Supply Opportunities, Challenges and Solutions

Braham Ferreira and Saijun Mao

Brief Introduction:

    This tutorial focuses on the opportunities, challenges and solutions of Silicon-Carbide (SiC) power semiconductor devices for high frequency high voltage power supply applications. The tutorial starts with the introduction of high frequency high voltage power supply including the basics, development history, the state-of-the-art technologies and future technology trends. Key enabling technologies for performance improvement of high frequency high voltage power supply are introduced. And SiC power semiconductor devices offers great potential for high frequency high voltage power supply on power density, efficiency and system performance improvement. The opportunities and challenges of SiC power semiconductor for the high frequency high voltage power supply are presented. Secondly, the characterizations and modeling of 1200V SiC power semiconductor devices are introduced in detailed. Evaluation of rectifier device technologies (SiC Schottky diode vs. ultra-fast silicon diode) for the Half-Wave Series Cockcroft-Walton voltage multiplier is provided. Thirdly, the comprehensive design considerations of high-speed gate driver solution, device parallel operation, and high-speed digital control for the high frequency SiC inverter are presented. Then SiC and silicon hybrid rectifier solutions for the Half-Wave Series Cockcroft-Walton Voltage Multiplier of the high voltage power supply are introduced. Finally, the technology demonstrator and prototype experimental results of 300kHz 2.2kW and 8kW 110kV output high voltage power supply prototypes are provided to validate the advantage of SiC power semiconductor devices.

image.png    Braham Ferreira Braham Ferreira (M’88-SM’01-F’05) received his B.Sc., M.Sc. and Ph.D. in electrical engineering from the Rand Afrikaans University, Johannesburg, South Africa, in 1980, 1982 and 1988 respectively. In 1981 he was with the Institute of Power Electronics and Electric Drives, Technical University of Aachen, and worked as a system engineer at ESD Pty (Ltd) from 1982-1985. From 1986 thru 1997 he was at the Department of Electrical Engineering, Rand Afrikaans University, where he held the Carl and Emily Fuchs Chair of Power Electronics in later years. Since 1998 he is holding the chair in Power electronics and Electrical Machines at the Delft University of Technology in The Netherlands and served as head of the Department during 2006-2010. Dr. Ferreira is author and co-author of 100 journal and transactions papers, 300 conference papers and 15 patents, and was awarded 15 prize paper awards. He is a Fellow of the IEEE and served as President of IEEE PELS during 2015-6.  

image.png    Saijun Mao  Saijun Mao (SM’20) received the B.S. and M.S. degrees from Nanjing University of Aeronautics and Astronautics, Nanjing, China, the Ph.D. degree from Delft University of Technology, Delft, the Netherlands, all in electrical engineering. From 2006 to 2017, he was a senior engineer and project leader with the GE Global Research Center, Shanghai, China. He was the Vice President of Shanghai Lingang Power Electronics Research Institute, and Principal Engineer in Leadrive Technology (Shanghai) Co., Ltd from 2017 to 2019. Dr. Mao is now a Research Fellow in Fudan University, China. His research interests include wide-bandgap(WBG) power semiconductor module packaging and high speed gate driver, WBG device based power conversion systems, as well as harsh environment power conversion. Dr. Mao has published more than 40 conference and journal papers. He provided 4 tutorials in IEEE leading power electronics conferences such as APEC ad ECCE. He holds over 40 issued patents and pending patent applications. He received one IEEE Best Paper award. He received more than 15 awards, including annual technology excellence award, annual technology excellence team award and top inventor award in GE Global Research Center.